IGBT 750 V, 225 A Field Stop Trench Gen4 (FS4) Bare Die. Pairing with NCD225E75F8M1

NCG225L75NF8M1 is a 750 V, 224 A rated Field Stop 4 (FS4) Trench IGBT bare die with a die size of 10 mm x 10 mm. it's suitable for back side and double side sintering attachment inside traction module • AEC-Q101 rev. D qualified\n• Enhanced reliability\n• Maximum junction temperature 175°C\n• Positive temperature coefficient\n• Easy paralleling\n• Very low saturation voltage: VCE(SAT) = 1.45 V (Typ.) @ IC = 225 A\n• Short Circuit rated\n• Optimized for motor control applications;

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安森美半导体

Field Stop Trench IGBT Die with Sinterable Top Metal

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安森美半导体

Package：模具；包装：散装 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 750V 225A FS4 DIE

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安森美半导体

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