NCG225L75NF8M1中文资料IGBT 750 V, 225 A Field Stop Trench Gen4 (FS4) Bare Die. Pairing with NCD225E75F8M1数据手册ONSEMI规格书

描述 Description

NCG225L75NF8M1 is a 750 V, 224 A rated Field Stop 4 (FS4) Trench IGBT bare die with a die size of 10 mm x 10 mm. it's suitable for back side and double side sintering attachment inside traction module

特性 Features

• AEC-Q101 rev. D qualified
• Enhanced reliability
• Maximum junction temperature 175°C
• Positive temperature coefficient
• Easy paralleling
• Very low saturation voltage: VCE(SAT) = 1.45 V (Typ.) @ IC = 225 A
• Short Circuit rated
• Optimized for motor control applications

应用 Application

• EV/HEV Traction Modules
• General Power Modules
• EV
• HEV

简介

NCG225L75NF8M1属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的NCG225L75NF8M1晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。