30-250V N-Channel SGT-I MOSFET

The NCEP40T15GU uses Super Trench technology that is uniquely optimized to provide the most efficient highfrequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switch • V DS =40V,I D =150AR DS(ON) =1.09mΩ (typical) @ V GS =10VR DS(ON) =1.5mΩ (typical) @ V GS =4.5V• Excellent gate charge x R DS(on) product(FOM)• Very low on-resistance R DS(on)• 150 °C operating temperature• Pb-free lead plating• 100% UIS tested;

NCEPower

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Schottky Barrier DIode

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SHINDENGEN

NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40T15AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

文件：834.51 Kbytes 页数：7 Pages

NCEPOWER

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NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40T15GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：767.21 Kbytes 页数：6 Pages

NCEPOWER

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NCE N-Channel Super Trench Power MOSFET

文件：386.58 Kbytes 页数：6 Pages

NCEPOWER

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