30-250V N-Channel SGT-I MOSFET

The NCEP40T15G uses Super Trench technology that is uniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of RDS(ON) and Qg. This device is ideal forhigh-frequency switching and • VDS =40V,ID =150A    RDS(ON)=1.6m? (typical) @ VGS=10V    RDS(ON)=1.9m? (typical) @ VGS=4.5V• Excellent gate charge x RDS(on) product(FOM)• Very low on-resistance RDS(on)• 150 °C operating temperature• Pb-free lead plating• 100% UIS tested;

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丝印：NCEP40T15G；Package：DFN5X6-8L；NCE N-Channel Super Trench Power MOSFET

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NCEPOWER

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30-250V N-Channel SGT-I MOSFET

The NCEP40T15GU uses Super Trench technology that is uniquely optimized to provide the most efficient highfrequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switch • V DS =40V,I D =150AR DS(ON) =1.09mΩ (typical) @ V GS =10VR DS(ON) =1.5mΩ (typical) @ V GS =4.5V• Excellent gate charge x R DS(on) product(FOM)• Very low on-resistance R DS(on)• 150 °C operating temperature• Pb-free lead plating• 100% UIS tested;

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Schottky Barrier DIode

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