丝印：NCEP1260F；Package：TO-220F；NCE N-Channel Super Trench Power MOSFET

Description The NCEP1260F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-

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NCEPOWER

新洁能

30-250V N-Channel SGT-I MOSFET

NCEPower

新洁能

Schottky Barrier Rectifier, Trench-based

This TO−277 trench Schottky rectifier provides fast switching performance in a compact thermally efficient package. The TO−277 package provides an excellent alternative to the DPAK, offering thermal performance nearly as good in a package occupying less than half the board space. Its low profi

文件：214.37 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Exceptionally Low Leakage Trench-based Schottky Rectifier

文件：72.15 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifier, Trench-based

This TO−277 trench Schottky rectifier provides fast switching performance in a compact thermally efficient package. The TO−277 package provides an excellent alternative to the DPAK, offering thermal performance nearly as good in a package occupying less than half the board space. Its low profi

文件：214.37 Kbytes 页数：6 Pages

ONSEMI

安森美半导体