30-250V N-Channel SGT-I MOSFET

The NCEP01T13B uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switch • V DS =100V,I D =135AR DS(ON) <4.3m? @ V GS =10VR DS(ON) <5m? @ V GS =4.5V• Excellent gate charge x R DS(on) product• Very low on-resistance R DS(on)• 175 °C operating temperature• Pb-free lead plating• 100% UIS tested;

NCEPower

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30-250V N-Channel SGT-I MOSFET

NCEPower

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NCE N-Channel Super Trench Power MOSFET

文件：305.74 Kbytes 页数：7 Pages

NCEPOWER

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LCE N-Channel Super Trench Power MOSFET

文件：835.97 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

NCE N-Channel Super Trench Power MOSFET

文件：326.67 Kbytes 页数：7 Pages

NCEPOWER

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