丝印：NCE8295A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON)

文件：709.83 Kbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：NCE8295AD；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8295AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON)

文件：643.89 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE8295AG；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8295AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Application ●Power switching application ● Hard switched and High frequency circuit

文件：616.98 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE8295AI；Package：TO-251-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8295AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON)

文件：692.27 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE8295AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8295AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON)

文件：619.59 Kbytes 页数：7 Pages

NCEPOWER

新洁能

12-200V N-Channel Trench MOSFET

The NCE8295AD uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. • V DS =82V,I D =95AR DS(ON) < 8.0 m? @ V GS =10V (Typ:6.6m?)• High density cell design for ultra low Rdson• Fully characterized avalanche voltage and current• Special designed for convertors and power controls• Good stability and uniformity with high E AS• Excellent package for good heat dissipatio;

NCEPower

新洁能

12-200V N-Channel Trench MOSFET

NCEPower

新洁能

12-200V N-Channel Trench MOSFET

NCEPower

新洁能