NCE N-Channel Enhancement Mode Power MOSFET

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NCEPOWER

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12-200V N-Channel Trench MOSFET

\n The NCE8290 uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS = 82V,I D =90A\nR DS(ON) < 8.5m? @ V GS =10V (Typ:7.5m?)\n• Special process technology for high ESD capability\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good h;

NCEPower

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丝印：NCE8290B；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8290B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =90A RDS(ON)

文件：357.44 Kbytes 页数：7 Pages

NCEPOWER

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12-200V N-Channel Trench MOSFET

\n The NCE8290B uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. \n• V DS =82V,I D =90A\nR DS(ON) < 8.8 m? @ V GS =10V (Typ:7.5m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Special designed for convertors and power controls\n• Good stability and uniformity with high E AS\n• Excellent package for good h;

NCEPower

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N沟道 MOSFET

NCEPower

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