NCE60P02Y数据手册批发采购新洁能NCEPOWER-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NCE60P02Y	文件：413.81 Kbytes Page：7 Pages	丝印：60P02Y；Package：SOT23-3L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P02Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-2A RDS(ON) 文件：413.81 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE60P02Y	文件：300 bytes Page：1 Pages	12-150V P-Channel Trench MOSFET	NCEPower 新洁能	NCEPower
EMF60P02J	文件：197.75 Kbytes Page：5 Pages	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐20V RDSON (MAX.) 60mΩ ID ‐4A Pb‐Free Lead Plating & Halogen Free 文件：197.75 Kbytes 页数：5 Pages	EXCELLIANCE 杰力科技	EXCELLIANCE
EMF60P02JS	文件：170.85 Kbytes Page：6 Pages	P-Channel Logic Level Enhancement Mode Field Effect Transistor 文件：170.85 Kbytes 页数：6 Pages	EXCELLIANCE 杰力科技	EXCELLIANCE
EMF60P02K	文件：193.81 Kbytes Page：5 Pages	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐20V RDSON (MAX.) 60mΩ ID ‐4.5A Pb‐Free Lead Plating & Halogen Free 文件：193.81 Kbytes 页数：5 Pages	EXCELLIANCE 杰力科技	EXCELLIANCE

更多NCE60P02Y供应商更新时间2026-1-17 10:29:00