NCE N-Channel Enhancement Mode Power MOSFET

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NCEPOWER

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12-200V N-Channel Trench MOSFET

\n The NCE6058 uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =60V,I D =58A\nR DS(ON) <16m? @ V GS =10V (Typ:13m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process technology for high ESD;

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丝印：NCE6058AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6058AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =58A RDS(ON)

文件：599.09 Kbytes 页数：7 Pages

NCEPOWER

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NCE N-Channel Enhancement Mode Power MOSFET

文件：408.55 Kbytes 页数：7 Pages

NCEPOWER

新洁能

12-200V N-Channel Trench MOSFET

\n The NCE6058K uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =60V,I D =58A\nR DS(ON) <16m? @ V GS =10V (Typ:13m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process technology for high ESD;

NCEPower

新洁能

12-200V N-Channel Trench MOSFET

NCEPower

新洁能