12-200V N-Channel Trench MOSFET

\n The NCE6058K uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =60V,I D =58A\nR DS(ON) <16m? @ V GS =10V (Typ:13m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process technology for high ESD;

NCEPower

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

文件：408.55 Kbytes 页数：7 Pages

NCEPOWER

新洁能

5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors

DESCRIPTION: These Transient Voltage Suppressor devices are a series of Bi-directional Silicon Transient Suppressors used in AC applications where large voltage transients can permanently damage voltage-sensitive components. FEATURES: ● BIDIRECTIONAL ● 1500 WATTS PEAK POWER ● VOLTAGE RANGE FR

文件：257.86 Kbytes 页数：4 Pages

MICROSEMI

美高森美

5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors

DESCRIPTION: These Transient Voltage Suppressor devices are a series of Bi-directional Silicon Transient Suppressors used in AC applications where large voltage transients can permanently damage voltage-sensitive components. FEATURES: ● BIDIRECTIONAL ● 1500 WATTS PEAK POWER ● VOLTAGE RANGE FR

文件：257.86 Kbytes 页数：4 Pages

MICROSEMI

美高森美

5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors

DESCRIPTION: These Transient Voltage Suppressor devices are a series of Bi-directional Silicon Transient Suppressors used in AC applications where large voltage transients can permanently damage voltage-sensitive components. FEATURES: ● BIDIRECTIONAL ● 1500 WATTS PEAK POWER ● VOLTAGE RANGE FR

文件：257.86 Kbytes 页数：4 Pages

MICROSEMI

美高森美