12-200V N-Channel Trench MOSFET

\n The NCE6058K uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =60V,I D =58A\nR DS(ON) <16m? @ V GS =10V (Typ:13m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process technology for high ESD;

NCEPower

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NCE N-Channel Enhancement Mode Power MOSFET

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NCEPOWER

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NCE Automotive N-Channel Enhancement Mode Power MOSFET

Description The NCEA6058K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =64A RDS(ON)

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NCEPOWER

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28-CH PPI Module

文件：299.17 Kbytes 页数：1 Pages

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POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE

High Current, High Voltage 100V Thru 1000V, Up To 190 Amp N-Channel, Size 7 MOSFETs DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET technology combined with a package designed specifically for high efficiency, high current applications. Th

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