NCE N-Channel Enhancement Mode Power MOSFET

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丝印：NCE3080IA；Package：TO-251；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3080IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =80A RDS(ON)

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12-200V N-Channel Trench MOSFET

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12-200V N-Channel Trench MOSFET

The NCE3080IA uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. • V DS =30V,I D =80AR DS(ON) <6.5m? @ V GS =10VR DS(ON) < 10m? @ V GS =5V• High density cell design for ultra low Rdson• Fully characterized avalanche voltage and current• Good stability and uniformity with high E AS• Excellent package for good heat dissipation;

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