12-200V N-Channel Trench MOSFET

The NCE3035Q uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. • V DS =30V,I D =35AR DS(ON) < 7.0mΩ @ V GS =10VR DS(ON) < 11mΩ @ V GS =4.5V• High density cell design for ultra low Rdson• Fully characterized avalanche voltage and current• Good stability and uniformity with high E AS• Excellent package for good heat dissipation• Special process technology for hig;

NCEPower

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

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NCEPOWER

新洁能

Phototransistor Detector

Description: The NTE3035A is designed for a wide variety of industrial processing and control applications requiring a sensitive detector. The NTE3034A is is an identical package and is designed to be used with the NTE3029A infrared emitter. Features: ● Miniature, Low Profile, Clear Pla

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NTE

Phototransistor Detector

Description: The NTE3035A is designed for a wide variety of industrial processing and control applications requiring a sensitive detector. The NTE3034A is is an identical package and is designed to be used with the NTE3029A infrared emitter. Features: ● Miniature, Low Profile, Clear Pla

文件：21.47 Kbytes 页数：2 Pages

NTE

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended

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PHI

飞利浦