NCE2003

N- and P-Channel 20V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

NCE2003

Complementary MOSFET;

The NCE2003 uses advanced  trench technology to provide excellent RDS(ON) and low gate charge  . The complementary  MOSFETs may be used to form a level shifted high side switch, and for a host  of other applications.

NCE2003

N and P-Channel Enhancement Mode Power MOSFET

NCS2003

OperationalAmplifiersHighSlewRate,Rail-to-RailOutput

NCS2003

LowVoltage,Rail-to-RailOutputOperationalAmplifier

NCS2003

OperationalAmplifiers,HighSlewRate,LowVoltage,Rail-to-RailOutput

TheNCS2003familyofopampsfeatureshighslewrate,low voltageoperationwithrail−to−railoutputdrivecapability.The1.8V operationallowshighperformanceoperationinlowvoltage,low powerapplications.Thefastslewrateandwideunity−gainbandwidth (5MHzat1.8V)maketheseop

NCS2003A

OperationalAmplifiersHighSlewRate,Rail-to-RailOutput

NCS2003A

OperationalAmplifiers,HighSlewRate,LowVoltage,Rail-to-RailOutput

TheNCS2003familyofopampsfeatureshighslewrate,low voltageoperationwithrail−to−railoutputdrivecapability.The1.8V operationallowshighperformanceoperationinlowvoltage,low powerapplications.Thefastslewrateandwideunity−gainbandwidth (5MHzat1.8V)maketheseop

NCV2003

OperationalAmplifiers,HighSlewRate,LowVoltage,Rail-to-RailOutput

TheNCS2003familyofopampsfeatureshighslewrate,low voltageoperationwithrail−to−railoutputdrivecapability.The1.8V operationallowshighperformanceoperationinlowvoltage,low powerapplications.Thefastslewrateandwideunity−gainbandwidth (5MHzat1.8V)maketheseop

NMA-2003

NMA2000NOISESOURCESERIES