| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NCE01P30I | 丝印：NCE01P30I；Package：TO-251；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-30A RDS(ON) 文件：321.87 Kbytes 页数：7 Pages | NCEPOWER 新洁能 | NCEPOWER | |
NCE01P30I | 12-150V P-Channel Trench MOSFET \n The NCE01P30I uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be\n used in a wide variety of applications. It is ESD protested. | NCEPower 新洁能 | NCEPower | |
NCE P-Channel Enhancement Mode Power MOSFET 文件：413.62 Kbytes 页数：7 Pages | NCEPOWER 新洁能 | NCEPOWER | ||
P-channel Enhancement Mode Power MOSFET Features VDS= -100V, ID= -40A RDS(ON) 文件：933.25 Kbytes 页数：4 Pages | BYCHIP 百域芯 | BYCHIP | ||
P-Channel 100 V (D-S) MOSFET 文件：998.27 Kbytes 页数：9 Pages | VBSEMI 微碧半导体 | VBSEMI |
技术参数
- Product status：
Production
- Package：
TO-251
- Polarity：
P
- BVDSS(V)：
-100
- ID(A)：
-30
- VTH(V)：
-1.9
- RDS(ON)@10VTyp(mΩ)：
44
- RDS(ON)@10VMax(mΩ)：
58
- RDS(ON)@4.5VTyp(mΩ)：
48
- RDS(ON)@4.5VMax(mΩ)：
65
- VGS(th)(V)：
±20
- CISS(pF)：
3810
- QG(nC)：
136
- PD(W)：
120
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NCE |
2017+ |
TO-251 |
13592 |
深圳仓库现货价格优 |
询价 | ||
NCE新洁能 |
21+ |
TO-251 |
25000 |
进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
NCE/新洁能 |
23+ |
TO-251 |
89630 |
当天发货全新原装现货 |
询价 | ||
NCE |
23+ |
- |
35375 |
华南总代 |
询价 | ||
NCE/新洁能 |
24+ |
TO-251 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
NCE新洁能 |
22+ |
TO-251 |
95000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
询价 | ||
NCE/新洁能 |
25+ |
TO-251 |
60000 |
全新原装现货特价销售,欢迎来电查询 |
询价 | ||
PRODUCTION |
1905+ |
TO-251 |
30000 |
原装正品 |
询价 | ||
NCE |
26+ |
To-252 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
询价 | ||
NCE新洁能 |
25+ |
TO-251 |
100000 |
新结能全线供应,支持终端生产 |
询价 |
相关规格书
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- SE1
- PI7C8150B
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