| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NCE01P30D | 丝印：NCE01P30D；Package：TO-263-2L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-30A RDS(ON) 文件：330.66 Kbytes 页数：7 Pages | NCEPOWER 新洁能 | NCEPOWER | |
NCE01P30D | 12-150V P-Channel Trench MOSFET | NCEPower 新洁能 | NCEPower | |
NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-30A RDS(ON) 文件：321.87 Kbytes 页数：7 Pages | NCEPOWER 新洁能 | NCEPOWER | ||
NCE P-Channel Enhancement Mode Power MOSFET 文件：413.62 Kbytes 页数：7 Pages | NCEPOWER 新洁能 | NCEPOWER | ||
P-Channel 100 V (D-S) MOSFET 文件：998.27 Kbytes 页数：9 Pages | VBSEMI 微碧半导体 | VBSEMI |
技术参数
- Product status：
Production
- Package：
TO-263
- Polarity：
P
- BVDSS(V)：
-100
- ID(A)：
-30
- VTH(V)：
-1.9
- RDS(ON)@10VTyp(mΩ)：
44
- RDS(ON)@10VMax(mΩ)：
58
- RDS(ON)@4.5VTyp(mΩ)：
48
- RDS(ON)@4.5VMax(mΩ)：
65
- VGS(th)(V)：
±20
- CISS(pF)：
3810
- QG(nC)：
136
- PD(W)：
120
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NCE |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NCE |
25+ |
TO-263-2L |
4000 |
原厂原装,价格优势 |
询价 | ||
NCE |
21+ |
TO-263 |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
NCE |
22+ |
TO-263 |
8000 |
原装现货实单支持 |
询价 | ||
NCE |
2023+ |
TO-263-2L |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
NCE新洁能 |
2026+ |
35375 |
绝对原装正品/真实库存/绝无虚假/支持送货 |
询价 | |||
NCE |
25+ |
TO-263-2L |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
24+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
NCE/新洁能 |
2511 |
TO-263 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
NCE |
1ESH1,FA |
TO-263-2L |
600 |
正规渠道货源 |
询价 |
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