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型号	下载订购	功能描述	制造商上传企业	LOGO
NCD57080	文件：1.19251 Mbytes Page：24 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio 文件：1.19251 Mbytes 页数：24 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57080	文件：300 bytes Page：1 Pages	Isolated High Current Gate Driver NCD57080A, NCD57080B and NCD57080C are high−current single channel IGBT gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer opti • High Peak Output Current (+8 A/-8 A)\n• Improves system efficiency\n• Short Propagation Delays with Accurate Matching\n• Improves PWM signal integrity\n• High Transient & Electromagnetic Immunity\n• Ruggedness in fast slew rate high voltage and high current switching applications\n• 3.75 KVrms On-;	ONSEMI 安森美半导体	ONSEMI
NCD57080A	文件：1.18417 Mbytes Page：24 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio 文件：1.18417 Mbytes 页数：24 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57080ADR2G	文件：1.18417 Mbytes Page：24 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio 文件：1.18417 Mbytes 页数：24 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57080B	文件：1.18417 Mbytes Page：24 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio 文件：1.18417 Mbytes 页数：24 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57080BDR2G	文件：1.18417 Mbytes Page：24 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio 文件：1.18417 Mbytes 页数：24 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57080C	文件：1.18417 Mbytes Page：24 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio 文件：1.18417 Mbytes 页数：24 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57080CDR2G	文件：1.18417 Mbytes Page：24 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio 文件：1.18417 Mbytes 页数：24 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57080A	文件：646.81 Kbytes Page：24 Pages	Isolated High Current IGBT Gate Driver 文件：646.81 Kbytes 页数：24 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57080ADR2G	文件：646.81 Kbytes Page：24 Pages	Isolated High Current IGBT Gate Driver 文件：646.81 Kbytes 页数：24 Pages	ONSEMI 安森美半导体	ONSEMI

技术参数

Pb-free：
Pb
Halide free：
H
Status：
Active
Power Switch：
IGBT
Number of Outputs：
1
Topology：
Single
Isolation Type：
Galvanic Isolation
Vin Max (V)：
20
VCC Max (V)：
30
Drive Source/Sink Typ (mA)：
6000/6000
Rise Time (ns)：
10
Fall Time (ns)：
6
tp Max (ns)：
60
Package Type：
SOIC-8

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市达恩科技有限公司	NCD57080CDR2G	ON	24+	NA	3000	进口原装假一罚十现货	询价
深圳市能创芯电子科技有限公司	NCD57080BDR2G	ON	23+	NA	3000	全新原装正品!一手货源价格优势!	询价
深圳市祥瑞智科技有限公司	NCD57080CDR2G	ON	25+	SOP-8	8000	原厂原装,价格优势	询价
深圳市高捷芯城科技有限公司	NCD57080CDR2G	onsemi(安森美)	24+	SOP8	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市得捷芯城科技有限公司	NCD57080ADR2G	ON(安森美)	24+	NA/	8735	原厂直销,现货供应,账期支持!	询价
深圳市中联芯电子有限公司	NCD57080CDR2G	ON	24+	SOIC-8	9000	只做原装正品有挂有货假一赔十	询价
深圳市星辰微电科技有限公司	NCD57080BDR2G	ON	24+	SOIC-8	25000	ON全系列可订货	询价
深圳市芯球通科技有限公司	NCD57080ADR2G	ON(安森美)	23+	SOIC-8	13323	公司只做原装正品,假一赔十	询价
深圳市英科美电子有限公司	NCD57080CDR2G	ON/安森美	2223+		26800	只做原装正品假一赔十为客户做到零风险	询价
北京天阳诚业科贸有限公司	NCD57080CDR2G	ON SEMICONDUCTOR	24+	con	35960	查现货到京北通宇商城	询价

更多NCD57080供应商更新时间2025-12-5 14:17:00

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