丝印：N20；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Sw

文件：122.19 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：N20；Package：SOT-343；Switching diode

Features 1) Four types of packaging are available. 2) High reliability. 3) High speed. (Typical recovery time= 1.5ns) 4) Suitable for high packing density layout. Applications Ultra high speed switching

文件：53.33 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：N20；Package：SOT-343；Switching Diode

Features 1) Small mold type. (UMD4) 2) High reliability. Application Ultra high speed switching

文件：547.36 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：N20；Package：SOT-343；Switching Diode

Features 1) Small mold type. (UMD4) 2) High reliability. Application Ultra high speed switching

文件：547.36 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：N20；Package：SOT563；NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR

Features - Epitaxial Planar Die Construction - Complementary PNP Types Available (DDA) - Built-In Biasing Resistors - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3)

文件：306.44 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：N20；Package：SOT523；NPN PRE-BIASED TRANSISTOR IN SOT523

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTA) • Built-In Biasing Resistors, R1 = R2 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change

文件：551.24 Kbytes 页数：10 Pages

DIODES

美台半导体

丝印：N20；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

文件：183.98 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：N20；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

文件：183.98 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：N20；Package：DFN2020-6S；30V N-Channel Enhancement MOSFET

文件：745.5 Kbytes 页数：6 Pages

LRC

乐山无线电

丝印：N20；Package：DFN3333-8A；N-Channel 20-V (D-S) MOSFET Low RDS(on) trench technology.

文件：559.36 Kbytes 页数：5 Pages

LRC

乐山无线电