丝印：N1N20；Package：SOT-223；N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET

Description This device is an N-channel Power MOSFET developed using the latest high voltage MESH OVERLAY™ process. The new patented STrip layout coupled with the company’s proprietary edge termination structure, makes it suitable in converters for lighting applications. Features ■ 100 a

文件：515.2 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET

Description This device is an N-channel Power MOSFET developed using the latest high voltage MESH OVERLAY™ process. The new patented STrip layout coupled with the company’s proprietary edge termination structure, makes it suitable in converters for lighting applications. Features ■ 100 a

文件：515.2 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体