P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The N0100P is a switching device, which can be driven directly by a 1.8 V power source. This N0100P features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V driv

文件：262.38 Kbytes 页数：8 Pages

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P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：463.77 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The N0100P is a switching device, which can be driven directly by a 1.8 V power source. This N0100P features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V driv

文件：262.38 Kbytes 页数：8 Pages

RENESAS

瑞萨

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

文件：262.38 Kbytes 页数：8 Pages

RENESAS

瑞萨

Power MOSFETs

Renesas

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包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：TRANSISTOR

Renesas Electronics America Inc