Polyurethane Adhesive-Back Bumpers

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HEYCO

Process Geometry

Features • Typical Input Capacitance: 6pF • High Breakdown Voltage: -400V Typical • Small Die: 746um X 746um X 203um • Bond Pads: 95um Diameter • Substrate Connected to Gate • Au Back-Side Finish Applications • General Purpose Amplifier • High Breakdown Voltage • Custom Part Options

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INTERFET

Geometry Types

InterFET

P/Active 1 Tolerance Dual Thevenin Termination Network

Product Description High speed logic devices like HSTL (High Speed Transceiver Logic) demand unique, high speed bus terminations. The dual Thévenin termination network provides 16 terminating channels per package, and optimizes signal integrity by reducing reflections and ringing. The terminatio

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CALMIRCO

15V, 1A Rectifier

Features • Low forward voltage (IF=0.5A, VF max=0.35V) (IF=1.0A, VF max=0.4V). • Ultrasmall-sized package, permitting SBS004- applied sets to be compact and slim. Applications • High frequency rectification (switching regulators, converters, choppers).

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SANYO

三洋

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TVU004 is Designed for Television Band IV & V Applications up to 860 MHz. FEATURES: • Common Emitter • PG = 8.5 dB at 4.0 W/860 MHz • Omnigold™ Metalization System

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ASI