N0100P资料使用说明书供应代理瑞萨RENESAS-114ic电子网

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N0100P	文件：262.38 Kbytes Page：8 Pages	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION TheN0100Pisaswitchingdevice,whichcanbedrivendirectlybya1.8Vpowersource. ThisN0100Pfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •1.8Vdriv	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
N0100P	文件：463.77 Kbytes Page：9 Pages	P-Channel 20-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
N0100P-T1-AT	文件：262.38 Kbytes Page：8 Pages	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION TheN0100Pisaswitchingdevice,whichcanbedrivendirectlybya1.8Vpowersource. ThisN0100Pfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •1.8Vdriv	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
N0201R	文件：105.92 Kbytes Page：5 Pages	PNP SILICON EPITAXIAL TRANSISTOR FEATURES •ComplementstoN0201S. •VCEO=-25V •IC(DC)=-1.0A •MiniaturepackageSOT-23F(2SB798:Packagevariationof3pPoMM)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
N0201R-T1-AT	文件：105.92 Kbytes Page：5 Pages	PNP SILICON EPITAXIAL TRANSISTOR FEATURES •ComplementstoN0201S. •VCEO=-25V •IC(DC)=-1.0A •MiniaturepackageSOT-23F(2SB798:Packagevariationof3pPoMM)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
N0201S	文件：103.87 Kbytes Page：5 Pages	NPN SILICON EPITAXIAL TRANSISTOR FEATURES ●ComplementstoN0201R. ●VCEO=30V ●IC(DC)=1.0A ●MiniaturepackageSOT-23F(2SD999:Packagevariationof3pPoMM)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
N0201S-T1-AT	文件：103.87 Kbytes Page：5 Pages	NPN SILICON EPITAXIAL TRANSISTOR FEATURES ●ComplementstoN0201R. ●VCEO=30V ●IC(DC)=1.0A ●MiniaturepackageSOT-23F(2SD999:Packagevariationof3pPoMM)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
N0202R	文件：104.47 Kbytes Page：5 Pages	PNP SILICON EPITAXIAL TRANSISTOR FEATURES ●ComplementstoN0202S. ●VCEO=-20V ●IC(DC)=-2.0A ●MiniaturepackageSOT-23F(2SB1114:Packagevariationof3pPoMM)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
N0202R-T1-AT	文件：104.47 Kbytes Page：5 Pages	PNP SILICON EPITAXIAL TRANSISTOR FEATURES ●ComplementstoN0202S. ●VCEO=-20V ●IC(DC)=-2.0A ●MiniaturepackageSOT-23F(2SB1114:Packagevariationof3pPoMM)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
N0214	文件：133 Kbytes Page：7 Pages	Very high voltage NPN power transistor Description ThedeviceisanNPNpowerbipolartransistormanufacturedusingthelatesthigh-voltagediffusedcollectortechnology. Features ■Highgain ■Veryhighvoltagecapability Applications ■Haptic ■Highvoltagesolenoiddriving	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
N02M083WL1A	文件：212.47 Kbytes Page：9 Pages	2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit Overview TheN02M083WL1Aisanintegratedmemorydeviceintendedfornonlife-support(Class1or2)medicalapplications.Thisdevicecomprisesa2MbitStaticRandomAccessMemoryorganizedas262,144wordsby8bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnolog	NANOAMPNanoAmp Solutions, Inc. NanoAmp Solutions, Inc.	NANOAMP
N02M083WL1AD	文件：212.47 Kbytes Page：9 Pages	2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit Overview TheN02M083WL1Aisanintegratedmemorydeviceintendedfornonlife-support(Class1or2)medicalapplications.Thisdevicecomprisesa2MbitStaticRandomAccessMemoryorganizedas262,144wordsby8bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnolog	NANOAMPNanoAmp Solutions, Inc. NanoAmp Solutions, Inc.	NANOAMP
N02M083WL1AD-70I	文件：212.47 Kbytes Page：9 Pages	2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit Overview TheN02M083WL1Aisanintegratedmemorydeviceintendedfornonlife-support(Class1or2)medicalapplications.Thisdevicecomprisesa2MbitStaticRandomAccessMemoryorganizedas262,144wordsby8bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnolog	NANOAMPNanoAmp Solutions, Inc. NanoAmp Solutions, Inc.	NANOAMP
N02M083WL1AN	文件：212.47 Kbytes Page：9 Pages	2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit Overview TheN02M083WL1Aisanintegratedmemorydeviceintendedfornonlife-support(Class1or2)medicalapplications.Thisdevicecomprisesa2MbitStaticRandomAccessMemoryorganizedas262,144wordsby8bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnolog	NANOAMPNanoAmp Solutions, Inc. NanoAmp Solutions, Inc.	NANOAMP
N02M083WL1AN-70I	文件：212.47 Kbytes Page：9 Pages	2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit Overview TheN02M083WL1Aisanintegratedmemorydeviceintendedfornonlife-support(Class1or2)medicalapplications.Thisdevicecomprisesa2MbitStaticRandomAccessMemoryorganizedas262,144wordsby8bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnolog	NANOAMPNanoAmp Solutions, Inc. NanoAmp Solutions, Inc.	NANOAMP
N0300N	文件：259.769 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheN0300Nisaswitchingdevicewhichcanbedrivendirectlybya4.5Vpowersource. Thedevicefeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •4.5Vdrive	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
N0300N-T1B-AT	文件：259.769 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheN0300Nisaswitchingdevicewhichcanbedrivendirectlybya4.5Vpowersource. Thedevicefeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •4.5Vdrive	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
N0300N-T1B-AT	文件：488.1 Kbytes Page：9 Pages	N-Channel 30-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
N0300P	文件：262.7 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR P-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING DESCRIPTION TheN0300Pisaswitchingdevicewhichcanbedrivendirectlyby a4.5Vpowersource. Thedevicefeaturesalowon-stateresistanceandexcellent switchingcharacteristics,andissuitableforapplicationssuchas powerswitc	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
N0300P-T1B-AT	文件：262.7 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR P-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING DESCRIPTION TheN0300Pisaswitchingdevicewhichcanbedrivendirectlyby a4.5Vpowersource. Thedevicefeaturesalowon-stateresistanceandexcellent switchingcharacteristics,andissuitableforapplicationssuchas powerswitc	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

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详细参数

型号：
N0
制造商：
RENESAS
制造商全称：
Renesas Technology Corp
功能描述：
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	N0100P	RENESAS/瑞萨	20+	SOT-23	120000	原装正品可含税交易	询价
深圳诚思涵科技有限公司	N0100P	Renesas	19+	SOT-23F	200000		询价
中天科工半导体（深圳）有限公司	N0100P	RENESAS/瑞萨	20+	SOT-23F	36800	原装优势主营型号-可开原型号增税票	询价
深圳市维尔达电子有限公司	N0100P	Renesas	2023+	SOT-23F	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市汇莱威科技有限公司	N0100P	VBSEMI/台湾微碧		SOT-23F	198589	假一罚十原包原标签常备现货!	询价
京海半导体(深圳)有限公司	N0100P	VB	21+	SOT-23F	10000	原装现货假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	N0100P	RENESAS/瑞萨		SOT-23	19000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市赛美科科技有限公司	N0100P	Renesas		SOT-23F	85000	一级代理原装正品假一罚十价格优势长期供货	询价
中科航电（深圳）电子集团有限公司	N0100P	RENESAS/瑞萨		SOT-23	90000	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价
深圳市芯为科技有限公司	N0100P	Renesas	2023+	SOT-23F	18800	芯为科技只做原装	询价

更多N0供应商更新时间2024-6-11 14:00:00

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