Standup Mount

Key Features EPIC® Seal Ceramic to metal braze. Gas filled hermetic chamber protects key components. Exceeds IP69K standard Temperature Tested to temperatures up to 200°C Contacts / Form Silver / SPST / NO Coil Optional efficient two coil design with no PWM or EMI emissions. Coil suppression bui

文件：1.93565 Mbytes 页数：3 Pages

Sensata

森萨塔

Low Cost, 10g, Dual Axis Accelerometer with Analog Outputs

General Description The MX210Q is a very low cost dual-axis acceleration sensor on a monolithic IC. With no moving parts, the device is extremely reliable and is manufactured on a submicron CMOS process enabling small geometries and small die size, resulting in low overall cost and high functio

文件：246.99 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Low Cost, 10g, Dual Axis Accelerometer with Analog Outputs

General Description The MX210Q is a very low cost dual-axis acceleration sensor on a monolithic IC. With no moving parts, the device is extremely reliable and is manufactured on a submicron CMOS process enabling small geometries and small die size, resulting in low overall cost and high functio

文件：246.99 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Low Cost, 10g, Dual Axis Accelerometer with Analog Outputs

General Description The MX210Q is a very low cost dual-axis acceleration sensor on a monolithic IC. With no moving parts, the device is extremely reliable and is manufactured on a submicron CMOS process enabling small geometries and small die size, resulting in low overall cost and high functio

文件：246.99 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Variable Split Band Inverter

文件：238.13 Kbytes 页数：17 Pages

CMLMICRO

Variable Split Band Inverter

文件：238.13 Kbytes 页数：17 Pages

CMLMICRO

Variable Split Band Inverter

文件：238.13 Kbytes 页数：17 Pages

CMLMICRO

Variable Split Band Inverter

文件：238.13 Kbytes 页数：17 Pages

CMLMICRO

MX21 系列（已淘汰）INSTA-MOUNT™ 模块化增量旋转光学编码器

Sensata

森萨塔

双NMOS半桥栅极驱动器

双N管半桥栅极驱动器是专门为上、下桥臂开关管都是N沟道VDMOS管的半桥电路结构设计的。下桥臂(低边)直接采用芯片的供电电源驱动，上桥臂(高边)N管采用自举(BOST)工作原理产生超过功率管电源电压的电压，打开高边功率。高边功率管导通期间，高边驱动电路供电完全依赖外置的自举电容上存储的电荷，因此该电容必须合理选择，并且应该首先导通低边功率管，让BOST电容充电，利用PWM信号定期对自举电容进行充电，以此保证高边驱动电压稳定。 ● 峰值驱动能力强，可推动150A MOSFET工作在300KHz；\r\n● 集成自举二极管，节省器件，便于排板；\r\n● 自适应死区保护技术，可根据MOSFET栅极电容大小动态调节内置死区时间，防止高、低边功率管直通；\r\n● 内置逻辑保护，输入同时为高时，输出不响应；\r\n● 针对42V以内应用设计，兼顾高耐压与低成本。;

Mixic

中科芯亿达