256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

文件：41.22 Kbytes 页数：7 Pages

INTERSIL

256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

文件：41.22 Kbytes 页数：7 Pages

INTERSIL

256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

文件：41.22 Kbytes 页数：7 Pages

INTERSIL

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

文件：29.33 Kbytes 页数：7 Pages

INTERSIL

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

文件：29.33 Kbytes 页数：7 Pages

INTERSIL

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

文件：29.33 Kbytes 页数：7 Pages

INTERSIL

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

文件：29.33 Kbytes 页数：7 Pages

INTERSIL

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

文件：29.33 Kbytes 页数：7 Pages

INTERSIL

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

文件：29.33 Kbytes 页数：7 Pages

INTERSIL

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

文件：29.33 Kbytes 页数：7 Pages

INTERSIL