CMDA Power Amplifier

DESCRIPTION The MWS CDMA is a high-efficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V CDMA and TDMA PCS battery-power

文件：111.4 Kbytes 页数：5 Pages

MICROSEMI

美高森美

W-CMDA Power Amplifier

DESCRIPTION The MWS W-CDMA is a highefficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V W-CDMA and CDMA2000, spread sp

文件：129.91 Kbytes 页数：4 Pages

MICROSEMI

美高森美

W-CMDA Power Amplifier

DESCRIPTION The MWS W-CDMA is a highefficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V W-CDMA and CDMA2000, spread sp

文件：129.91 Kbytes 页数：4 Pages

MICROSEMI

美高森美

W-CMDA Power Amplifier

DESCRIPTION The MWS W-CDMA is a highefficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V W-CDMA and CDMA2000, spread sp

文件：129.91 Kbytes 页数：4 Pages

MICROSEMI

美高森美

256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

文件：41.22 Kbytes 页数：7 Pages

INTERSIL

256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

文件：41.22 Kbytes 页数：7 Pages

INTERSIL

256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

文件：41.22 Kbytes 页数：7 Pages

INTERSIL

256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

文件：41.22 Kbytes 页数：7 Pages

INTERSIL

256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

文件：41.22 Kbytes 页数：7 Pages

INTERSIL

256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

文件：41.22 Kbytes 页数：7 Pages

INTERSIL