单 P 沟道，逻辑电平，功率 MOSFET，-30V，-50A，25mΩ

Automotive Power MOSFET designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor control Avalanche Energy Specified\nSource-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\nDiode is Characterized for Use in Bridge Circuits\nIDSS and VDS(on) Specified at Elevated Temperature\nShort Heatsink Tab ManufacturedNot Sheared\nSpecially Designed Leadframe for Maximum Po;

ONSEMI

安森美半导体

P-Channel Power MOSFET

文件：143.96 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

MOS FIELD EFFECT TRANSISTOR

Description The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A) • Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS = 0 V) • Designed for automotive app

文件：238.04 Kbytes 页数：8 Pages

RENESAS

瑞萨

Product Scout Automotive

文件：5.67799 Mbytes 页数：6 Pages

RENESAS

瑞萨

OptiMOS-P Power - Transistor

Feature • P-Channel • Enhancement mode • Logic Level • High current rating • 175°C operating temperature • Avalanche rated • dv/dt rated

文件：77.21 Kbytes 页数：8 Pages

Infineon

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