二极管 / FRD

First

福斯特

N-Channel Enhancement Mode Field Effect Transistor

文件：356.82 Kbytes 页数：7 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 26A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.05Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：306.04 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：358.95 Kbytes 页数：7 Pages

Fairchild

仙童半导体