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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CA3060	文件：193.53 Kbytes Page：12 Pages	110kHz,OperationalTransconductanceAmplifierArray Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
CA3060E	文件：193.53 Kbytes Page：12 Pages	110kHz,OperationalTransconductanceAmplifierArray Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
CA3060E	文件：143.1 Kbytes Page：12 Pages	110kHz,OperationalTransconductanceAmplifierArray Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic	HARRIS HARRIS corporation	HARRIS
CBD3060LCT	文件：71.56 Kbytes Page：4 Pages	LOWVFSCHOTTKYRECTIFIER	PANJITPANJIT International Inc. 强茂強茂股份有限公司	PANJIT
CBRX3060CT	文件：313.74 Kbytes Page：4 Pages	TrenchSchottkyBarrierRectifier	Good-Ark Good-Ark	Good-Ark
CC3060C-AZ	文件：127.87 Kbytes Page：3 Pages	3-phase3-line500VACAvailable5-150AForoutputlineonly	SOSHINSOSHIN 双信电机双信电机株式会社	SOSHIN
CEB3060	文件：413.92 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,105A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED3060	文件：397.84 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,75A,RDS(ON)=6.6mW@VGS=10V. RDS(ON)=9.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED3060	文件：617.19 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,75A,RDS(ON)=6.6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.5mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEM3060	文件：543.08 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,14A,RDS(ON)=7.8mW@VGS=10V. RDS(ON)=11.5mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEM3060	文件：105.48 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,14A,RDS(ON)=7.8mΩ@VGS=10V. RDS(ON)=11.5mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEM3060	文件：1.04453 Mbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER
CEP3060	文件：413.92 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,105A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU3060	文件：397.84 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,75A,RDS(ON)=6.6mW@VGS=10V. RDS(ON)=9.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU3060	文件：993.67 Kbytes Page：4 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER
CEU3060	文件：617.19 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,75A,RDS(ON)=6.6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.5mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEXPRESS-BW-N3060	文件：312.24 Kbytes Page：4 Pages	COMExpressCompactSizeType6Module	AdlinkAdvance Technologies AdlinkAdvance Technologies	Adlink
CHM3060JPT	文件：380.73 Kbytes Page：3 Pages	N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE30VoltsCURRENT14Ampere FEATURE Smallflatpackage.(SO-8) SuperHighdensitycelldesignforextremelylowRDS(ON). Highsaturationcurrentcapability. APPLICATION Servomotorcontrol. PowerMOSFETgatedrivers. Otherswitchingapplications.	CHENMKOCHENMKO CHENMKO	CHENMKO
CRO3060A	文件：48.22 Kbytes Page：2 Pages	LOWCOST-HIGHPERFORMANCEVOLTAGECONTROLLEDOSCILLATOR	ZCOMM Z-Communications, Inc	ZCOMM
CRO3060A	文件：85.05 Kbytes Page：2 Pages	Voltage-ControlledOscillatorSurfaceMountModule	ZCOMM Z-Communications, Inc	ZCOMM

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳兆威电子有限公司	MUR3060FCT	平伟	23+	TO-220F	90000	渠道可追溯可开增值税正规报关绝不损原包装	询价
深圳廊盛科技有限公司	MUR3060FCT	平伟	22+	TO-220F	50000	原装正品.假一罚十	询价
深圳市辰德隆电子科技有限公司	MUR3060FCT	平伟	23+	TO-220F	6000	生态型分销商代理现货订货调货技术	询价
深圳市河锋鑫科技有限公司	MUR3060-FJ	IR	22+		6000	终端可免费供样,支持BOM配单	询价
深圳市安富世纪电子有限公司	MUR3060-FJ	IR	23+		8000	只做原装现货	询价
浙江永芯科技有限公司	MUR3060L	YANGJIE	24+	TO-220AC	50000	原厂直销全新原装正品现货欢迎选购	询价
瀚佳科技(深圳)有限公司	MUR3060P	ON	2020+	快恢复二极管	16800	绝对原装进口现货,假一赔十,价格优势!	询价
贸泽芯城（深圳）电子科技有限公司	MUR3060P	GOOD-ARK/苏州固锝		TO-247-2	16103	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市芯为科技有限公司	MUR3060P	ON	2023+	快恢复二极管	16800	芯为科技只有原装	询价
深圳市高捷芯城科技有限公司	MUR3060P	YANGJIE(扬杰)	23+	TO2472	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价

更多MUR3060FCS供应商更新时间2024-6-4 8:48:00

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