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MUR3060P

丝印:MUR3060P;Package:TO-247AC;Ultra-Fast Recovery Recifier Diodes MUR3060P 30A FRED Pt

Features Adopt FRED chip Low forward Voltage drop Fast reverse recovery time High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability

文件:2.42195 Mbytes 页数:3 Pages

RFE

RFE international

MUR3060P

丝印:MUR3060P;Package:TO-247-2L;Super-Fast Recovery Diodes 30A FRED Pt

Features ● Adopt FRED chip ● Low forward Voltage drop ● Fast reverse recovery time ● High frequency operation ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability Typical

文件:1.39598 Mbytes 页数:4 Pages

LUGUANG

鲁光电子

MUR3060P_V01

Super-Fast Recovery Diodes 30A FRED Pt

Features ● Adopt FRED chip ● Low forward Voltage drop ● Fast reverse recovery time ● High frequency operation ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability Typical

文件:1.39598 Mbytes 页数:4 Pages

LUGUANG

鲁光电子

MUR3060P3T

Ultra-Fast Recovery Diodes 15A*2 FRED Pt

Features ● Adopt FRED chip ● Low forward Voltage drop ● Fast reverse recovery time ● High frequency operation ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability Typical

文件:1.08775 Mbytes 页数:4 Pages

LUGUANG

鲁光电子

MUR3060PA

30.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifier

Features ◇ Dual rectifier construction, positive center-tap ◇ Plastic package has Underwriters Laboratory Flammability Classification 94V0 ◇ Glass passivated chip junctions ◇ Superfast recovery time, high voltage ◇ Low forward voltage, high current capability ◇ Low thermal resistance ◇

文件:809.5 Kbytes 页数:2 Pages

THINKISEMI

思祁半导体

MUR3060PA

30.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件:284.34 Kbytes 页数:2 Pages

THINKISEMI

思祁半导体

MUR3060PD

30.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifier

Features ◇ Dual rectifier construction, positive center-tap ◇ Plastic package has Underwriters Laboratory Flammability Classification 94V0 ◇ Glass passivated chip junctions ◇ Superfast recovery time, high voltage ◇ Low forward voltage, high current capability ◇ Low thermal resistance ◇

文件:809.5 Kbytes 页数:2 Pages

THINKISEMI

思祁半导体

MUR3060PL

30.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件:286.85 Kbytes 页数:2 Pages

THINKISEMI

思祁半导体

MUR3060PR

30.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件:292.61 Kbytes 页数:2 Pages

THINKISEMI

思祁半导体

MUR3060PT

30.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件:418.56 Kbytes 页数:2 Pages

THINKISEMI

思祁半导体

技术参数

  • VRM (V):

     600

  • IFSM (A):

     200

  • IF (A):

     30

  • VF (V):

     1.7

  • IFM (A):

     30

  • TRR (μs):

     0.05

  • IR (μA):

     50

  • @VR (V):

     600

  • Package Qty:

     Tube

  • FIT:

     40; Tj=100℃

供应商型号品牌批号封装库存备注价格
GI
24+
TO 3P
157362
明嘉莱只做原装正品现货
询价
ON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
ON
25+
TO247
6500
十七年专营原装现货一手货源,样品免费送
询价
ON(安森美)
2511
4945
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价
询价
24+
5000
公司存货
询价
MOT
25+
TO-3P
18000
原厂直接发货进口原装
询价
24+
TO3P
5632
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ON
2013
TO-247
20
全新
询价
ON
24+
6430
原装现货/欢迎来电咨询
询价
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
更多MUR3060供应商 更新时间2026-1-21 13:36:00