丝印：MUR3060P；Package：TO-247AC；Ultra-Fast Recovery Recifier Diodes MUR3060P 30A FRED Pt

Features Adopt FRED chip Low forward Voltage drop Fast reverse recovery time High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability

文件：2.42195 Mbytes 页数：3 Pages

RFERFE international

RFE国际公司RFE国际股份有限公司

丝印：MUR3060P；Package：TO-247AC；Ultra-Fast Recovery Recifier Diodes MUR3060P 30A FRED Pt

Features Adopt FRED chip Low forward Voltage drop Fast reverse recovery time High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability

文件：2.42195 Mbytes 页数：3 Pages

RFERFE international

RFE国际公司RFE国际股份有限公司

30.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifier

Features ◇ Dual rectifier construction, positive center-tap ◇ Plastic package has Underwriters Laboratory Flammability Classification 94V0 ◇ Glass passivated chip junctions ◇ Superfast recovery time, high voltage ◇ Low forward voltage, high current capability ◇ Low thermal resistance ◇

文件：809.5 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

30.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：284.34 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

30.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifier

Features ◇ Dual rectifier construction, positive center-tap ◇ Plastic package has Underwriters Laboratory Flammability Classification 94V0 ◇ Glass passivated chip junctions ◇ Superfast recovery time, high voltage ◇ Low forward voltage, high current capability ◇ Low thermal resistance ◇

文件：809.5 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

30.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：286.85 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

30.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：292.61 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

30.0 Ampere Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ◇ Dual rectifier construction, positive center-tap ◇ Plastic package has Underwriters Laboratory Flammability Classification 94V0 ◇ Glass passivated chip junctions ◇ Superfast recovery time, high voltage ◇ Low forward voltage, high current capability ◇ Low thermal resistance ◇

文件：721.51 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

ULTRAFAST RECTIFIERS 30 AMPERES, 200??00 VOLTS

These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperature • High Voltage Capability to 600 V • Low Forward Drop • Low Leakage Spec

文件：474.58 Kbytes 页数：7 Pages

KERSEMI

30.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifier

Features ◇ Dual rectifier construction, positive center-tap ◇ Plastic package has Underwriters Laboratory Flammability Classification 94V0 ◇ Glass passivated chip junctions ◇ Superfast recovery time, high voltage ◇ Low forward voltage, high current capability ◇ Low thermal resistance ◇

文件：809.5 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体