零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
MTZJ5.6C | MTZJ SERIES ZENER DIODES MTZJSERIESZENERDIODES | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | LRC | |
MTZJ5.6C | Axial Lead Zener Diodes Features: *Highreliability *Verysharpreversecharacteristic *Lowreversecurrentlevel Applications: *VoltageStabilization MechanicalData: *Case:DO-34GlassCase *Weight:Approx0.09gram | WEITRON Weitron Technology | WEITRON | |
MTZJSERIESZENERDIODES MTZJSERIESZENERDIODES | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | LRC | ||
AxialLeadZenerDiodes Features: *Highreliability *Verysharpreversecharacteristic *Lowreversecurrentlevel Applications: *VoltageStabilization MechanicalData: *Case:DO-34GlassCase *Weight:Approx0.09gram | WEITRON Weitron Technology | WEITRON | ||
ELECTROSTATICDISCHARGENOISECLIPPINGDIODES400mWTYPE ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(400mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV. FEATURES | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
ELECTROSTATICDISCHARGENOISECLIPPINGDIODES500mWTYPE ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(500mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV. FEATURES | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
ELECTROSTATICDISCHARGENOISECLIPPINGDIODES150mWTYPE ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(150mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV,thusmakingits | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
ELECTROSTATICDISCHARGENOISECLIPPINGDIODES200mWTYPE ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(200mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV,thusmakingits | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
ELECTROSTATICDISCHARGENOISECLIPPINGDIODE2-PINSUPERMINIMOLD ELECTROSTATICDISCHARGENOISECLIPPINGDIODE 2-PINSUPERMINIMOLD DESCRIPTION TheseproductsarethediodedevelopedforESD(ElectrostaticDischarge)noiseprotection.BasedontheIEC61000-4-2testonelectromagneticinterference(EMI),thediodeassuresanendurance,thusmakingits | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
ELECTROSTATICDISCHARGENOISECLIPPINGDIODES200mWTYPE ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(200mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV,thusmakingits | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
ELECTROSTATICDISCHARGENOISECLIPPINGDIODESDOUBLETYPE,ANODECOMMON3PINMINIMOLD ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(DOUBLETYPE,ANODECOMMON) 3PINMINIMOLD ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofno | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE)5PINMINIMOLD ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE) 5PINMINIMOLD ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceof | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUADTYPE:COMMONANODE)5-PINSUPERSMALLMINIMOLD DESCRIPTION ThisproductseriesisalowcapacitancetypediodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC-61000-4-2testonelectromagneticinter | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
ESDNOISECLIPPINGDIODE DESCRIPTION TheseproductsareadiodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC-61000-4-2testonelectromagneticinterference(EMI),thediodeassuresanendurance,thusmakingitselfmostsuitableforexternalinterfacecircuitprotection.Theseproductsareca | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE)5-PINMINIMOLD | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE)5-PINSUPERSMALLMINIMOLD | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
LOWCAPACITANCEHIGHESDTYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODES5-PINMINIMOLD | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
Voltageregulatordiodes DESCRIPTION Low-powergeneralpurposevoltageregulatordiodesinasmallplasticSMDSOD323package. FEATURES •Totalpowerdissipation: max.400mW •Smallplasticpackagesuitablefor surfacemounteddesign •Widevarietyofvoltageranges: nom.2.4to36V(E24range). | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
SURFACEMOUNTSILICONZENERDIODES VOLTAGE4.7to36VoltsPOWER400mWatts FEATURES •PlanarDieconstruction •400mWPowerDissipation •IdeallySuitedforAutomatedAssemblyProcesses •LeadfreeincomplywithEURoHS2002/95/ECdirectives. •GreenmoldingcompoundasperIEC61249Std..(HalogenFree) | PANJITPan Jit International Inc. 强茂強茂股份有限公司 | PANJIT | ||
SURFACEMOUNTSILICONZENERDIODES | PANJITPan Jit International Inc. 强茂強茂股份有限公司 | PANJIT |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
LRC |
23+ |
NA |
25060 |
只做进口原装,终端工厂免费送样 |
询价 | ||
Taiwan Semiconductor |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
TAIWAN |
1809+ |
DO-34 |
16750 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
ST(先科) |
23+ |
NA |
200 |
稳压二极管 |
询价 | ||
ST |
DO-34 |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
22+ |
DO-34 |
16900 |
支持样品 原装现货 提供技术支持! |
询价 | ||
TSC/台湾半导体 |
23+ |
DO-34 |
89630 |
当天发货全新原装现货 |
询价 | ||
TSC |
22+ |
DO-34 |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 | ||
TAIWAN SEMICONDUCTOR |
23+ |
DO-34 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
TSC |
23+ |
DO-34 |
50000 |
全新原装正品现货,支持订货 |
询价 |
相关规格书
更多- MTZJ5.6D
- MTZJ51
- MTZJ51A
- MTZJ51B
- MTZJ51C
- MTZJ51D
- MTZJ56
- MTZJ56A
- MTZJ56B
- MTZJ56C
- MTZJ56D
- MTZJ5V1
- MTZJ5V1
- MTZJ5V1B
- MTZJ5V1S
- MTZJ5V6
- MTZJ5V6A
- MTZJ5V6C
- MTZJ6.2
- MTZJ6.2
- MTZJ6.2A
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
相关库存
更多- MTZJ5.6D
- MTZJ51
- MTZJ51A
- MTZJ51B
- MTZJ51C
- MTZJ51D
- MTZJ56
- MTZJ56A
- MTZJ56B
- MTZJ56C
- MTZJ56D
- MTZJ5V1
- MTZJ5V1A
- MTZJ5V1C
- MTZJ5V6
- MTZJ5V6
- MTZJ5V6B
- MTZJ5V6S
- MTZJ6.2
- MTZJ6.2
- MTZJ6.2A
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B
- MTZJ6.2B