MTZJ5.6D资料datasheet下载行情报价WEITRON-114ic电子网

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MTZJ5.6D	文件：34.34 Kbytes Page：2 Pages	MTZJ SERIES ZENER DIODES MTZJSERIESZENERDIODES	LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司	LRC
MTZJ5.6D	文件：613.51 Kbytes Page：3 Pages	Axial Lead Zener Diodes Features: Highreliability Verysharpreversecharacteristic Lowreversecurrentlevel Applications: VoltageStabilization MechanicalData: Case:DO-34GlassCase Weight:Approx0.09gram	WEITRON Weitron Technology	WEITRON
NNCD5.6A	文件：47.71 Kbytes Page：8 Pages	ELECTROSTATICDISCHARGENOISECLIPPINGDIODES400mWTYPE ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(400mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV. FEATURES	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NNCD5.6B	文件：43.83 Kbytes Page：8 Pages	ELECTROSTATICDISCHARGENOISECLIPPINGDIODES500mWTYPE ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(500mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV. FEATURES	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NNCD5.6C	文件：41.95 Kbytes Page：8 Pages	ELECTROSTATICDISCHARGENOISECLIPPINGDIODES150mWTYPE ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(150mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV,thusmakingits	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NNCD5.6D	文件：41.63 Kbytes Page：8 Pages	ELECTROSTATICDISCHARGENOISECLIPPINGDIODES200mWTYPE ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(200mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV,thusmakingits	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NNCD5.6DA	文件：227.15 Kbytes Page：8 Pages	ELECTROSTATICDISCHARGENOISECLIPPINGDIODE2-PINSUPERMINIMOLD ELECTROSTATICDISCHARGENOISECLIPPINGDIODE 2-PINSUPERMINIMOLD DESCRIPTION TheseproductsarethediodedevelopedforESD(ElectrostaticDischarge)noiseprotection.BasedontheIEC61000-4-2testonelectromagneticinterference(EMI),thediodeassuresanendurance,thusmakingits	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NNCD5.6E	文件：40.02 Kbytes Page：8 Pages	ELECTROSTATICDISCHARGENOISECLIPPINGDIODES200mWTYPE ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(200mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV,thusmakingits	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NNCD5.6F	文件：40.17 Kbytes Page：8 Pages	ELECTROSTATICDISCHARGENOISECLIPPINGDIODESDOUBLETYPE,ANODECOMMON3PINMINIMOLD ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(DOUBLETYPE,ANODECOMMON) 3PINMINIMOLD ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofno	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NNCD5.6G	文件：41.98 Kbytes Page：8 Pages	ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE)5PINMINIMOLD ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE) 5PINMINIMOLD ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceof	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NNCD5.6H	文件：40.88 Kbytes Page：5 Pages	LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUADTYPE:COMMONANODE)5-PINSUPERSMALLMINIMOLD DESCRIPTION ThisproductseriesisalowcapacitancetypediodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC-61000-4-2testonelectromagneticinter	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NNCD5.6J	文件：113.87 Kbytes Page：5 Pages	ESDNOISECLIPPINGDIODE DESCRIPTION TheseproductsareadiodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC-61000-4-2testonelectromagneticinterference(EMI),thediodeassuresanendurance,thusmakingitselfmostsuitableforexternalinterfacecircuitprotection.Theseproductsareca	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NNCD5.6LG	文件：49.3 Kbytes Page：8 Pages	LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE)5-PINMINIMOLD	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NNCD5.6LH	文件：49.45 Kbytes Page：8 Pages	LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE)5-PINSUPERSMALLMINIMOLD	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NNCD5.6MG	文件：35.49 Kbytes Page：4 Pages	LOWCAPACITANCEHIGHESDTYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODES5-PINMINIMOLD	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
PDZ5.6B	文件：63.16 Kbytes Page：8 Pages	Voltageregulatordiodes DESCRIPTION Low-powergeneralpurposevoltageregulatordiodesinasmallplasticSMDSOD323package. FEATURES •Totalpowerdissipation: max.400mW •Smallplasticpackagesuitablefor surfacemounteddesign •Widevarietyofvoltageranges: nom.2.4to36V(E24range).	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
PDZ5.6B	文件：117.54 Kbytes Page：4 Pages	SURFACEMOUNTSILICONZENERDIODES VOLTAGE4.7to36VoltsPOWER400mWatts FEATURES •PlanarDieconstruction •400mWPowerDissipation •IdeallySuitedforAutomatedAssemblyProcesses •LeadfreeincomplywithEURoHS2002/95/ECdirectives. •GreenmoldingcompoundasperIEC61249Std..(HalogenFree)	PANJITPan Jit International Inc. 强茂強茂股份有限公司	PANJIT
PDZ5.6B	文件：294.89 Kbytes Page：5 Pages	SURFACEMOUNTSILICONZENERDIODES	PANJITPan Jit International Inc. 强茂強茂股份有限公司	PANJIT
PDZ5.6B	文件：192.25 Kbytes Page：9 Pages	Voltageregulatordiodes DESCRIPTION Low-powergeneralpurposevoltageregulatordiodesinasmallplasticSMDSOD323package. FEATURES •Totalpowerdissipation: max.400mW •Smallplasticpackagesuitablefor surfacemounteddesign •Widevarietyofvoltageranges: nom.2.4to36V(E24range).	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
PDZ5.6B	文件：143.27 Kbytes Page：9 Pages	Totalpowerdissipation:max.400mW DESCRIPTION Low-powergeneralpurposevoltageregulatordiodesinasmallplasticSMDSOD323(SC-76)package. FEATURES •Totalpowerdissipation:max.400mW •Smallplasticpackagesuitableforsurfacemounteddesign •Widevarietyofvoltageranges:nominal2.4to36V(E24range) •Tolera	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	MTZJ5.6D	LRC	23+	NA	25060	只做进口原装,终端工厂免费送样	询价
深圳市鹏顺微电子科技有限公司	MTZJ51SA0	Taiwan Semiconductor	2022+	原厂原包装	8600	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市科雨电子有限公司	MTZJ51SR0G	TAIWAN	1809+	DO-34	16750	就找我吧!--邀您体验愉快问购元件!	询价
北京天阳诚业科贸有限公司	MTZJ56	ST(先科)	23+	NA	200	稳压二极管	询价
中科航电（深圳）电子集团有限公司	MTZJ5V1	ST		DO-34	36900	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价
深圳市星佑电子有限公司	MTZJ5V1	ST	22+	DO-34	16900	支持样品原装现货提供技术支持!	询价
深圳市晨豪科技有限公司	MTZJ5V1B	TSC/台湾半导体	23+	DO-34	89630	当天发货全新原装现货	询价
深圳市振芯物联科技有限公司	MTZJ5V1C	TSC	22+	DO-34	28600	只做原装正品现货假一赔十一级代理	询价
深圳市威尔健半导体有限公司	MTZJ5V1C	TAIWAN SEMICONDUCTOR	23+	DO-34	50000	全新原装正品现货,支持订货	询价
深圳市安富世纪电子有限公司	MTZJ5V1C	TSC	23+	DO-34	50000	全新原装正品现货,支持订货	询价

更多MTZJ5.6D供应商更新时间2024-9-24 9:01:00

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