丝印：MTY；Package：SMB；Automotive 600 W Transil

Description The SM6TY Transil series has been designed to protect sensitive automotive circuits against surges defined in ISO 7637-2 and against electrostatic discharges according to IEC 61000-4-2 and ISO 10605. The planar technology makes this device compatible with high-end circuits where low l

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STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=100A@ TC=25℃ ·Drain Source Voltage : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =11mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM

TMOS E-FET™ Power Field Effect transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for h

文件：216.62 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM

TMOS E-FET Power Eield Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

文件：228.65 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

文件：232.76 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

文件：232.76 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM

TMOS E−FET Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

文件：239.48 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

文件：236.99 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

文件：237.96 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

文件：237.96 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉