MTY25N60E中文资料Motorola数据手册PDF规格书
MTY25N60E规格书详情
TMOS E-FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
产品属性
- 型号：
MTY25N60E
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
- 制造商：
ON Semiconductor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
NA/ |
17138 |
原装现货,当天可交货,原型号开票 |
询价 | ||
ON/安森美 |
24+ |
TO3PL |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
ON/安森美 |
23+ |
TO-3PL |
15887 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
ON/安森美 |
23+ |
TO-3PL |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
ON |
23+ |
TO-264 |
6893 |
询价 | |||
ON |
TO3PL |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
ON/安森美 |
2022 |
TO264 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
MOT |
9417 |
3 |
公司优势库存 热卖中! |
询价 | |||
ON |
08+(pbfree) |
TO-264-3 |
8866 |
询价 | |||
ON |
2020+ |
TO-3P |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 |
