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MTP15N06

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.16Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP15N06

MTP15N05

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTP15N06L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP15N06V

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM

TMOSPOWERFET15AMPERES60VOLTSRDS(on)=0.12OHM NewFeaturesofTMOSV •On–resistanceAreaProductaboutOne–halfthatofStandardMOSFETswithNewLowVoltage,LowRDS(on)Technology •FasterSwitchingthanE–FETPredecessors FeaturesCommontoTMOSVandTMOSE–FETS •Av

MotorolaMotorola, Inc

摩托罗拉

MTP15N06VL

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

TMOSPOWERFET15AMPERES60VOLTSRDS(on)=0.085OHM NewFeaturesofTMOSV •On–resistanceAreaProductaboutOne–halfthatofStandardMOSFETswithNewLowVoltage,LowRDS(on)Technology •FasterSwitchingthanE–FETPredecessors FeaturesCommontoTMOSVandTMOSE–FETS

MotorolaMotorola, Inc

摩托罗拉

MTP15N06L

POWER FIELD EFFECT TRANSISTOR

MotorolaMotorola, Inc

摩托罗拉

MTP15N06V

Power MOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTP15N06VL

Power MOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

15N06

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR

DESCRIPTION TheUTC15N06usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

15N06

FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

15N06

15A,60VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

15N06

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

15N06L

60VN-ChannelEnhancementModeMOSFET

PANJITPANJIT International Inc.

强茂強茂股份有限公司

FDMC15N06

N-ChannelMOSFET55V,15A,0.090廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU15N06L

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

HFP15N06

N-ChannelEnhancementModeFieldEffectTransistor

Features •15A,60V(SeeNote),RDS(on)

HuashanHuashan Electronic Devices Co

华汕电子器件

MTB15N06E

TMOSPOWERFET15AMPERES

MotorolaMotorola, Inc

摩托罗拉

MTB15N06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTB15N06V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTB15N06V

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    MTP15N06

  • 制造商:

    MOTOROLA

  • 制造商全称:

    Motorola, Inc

  • 功能描述:

    POWER FIELD EFFECT TRANSISTOR

供应商型号品牌批号封装库存备注价格
ON
23+
TO-220
6893
询价
MOT
06+
TO-220
3000
原装库存
询价
ON
16+
TO-220
10000
全新原装现货
询价
9000
询价
ON
2020+
TO-220
35000
100%进口原装正品公司现货库存
询价
ON
2021+
TO-220
6430
原装现货/欢迎来电咨询
询价
isc
2024
TO-220
5000
国产品牌isc,可替代原装
询价
23+
2800
正品原装货价格低qq:2987726803
询价
ON/安森美
24+
TO220
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
ON
2016+
TO220
2500
只做原装,假一罚十,公司可开17%增值税发票!
询价
更多MTP15N06供应商 更新时间2024-5-30 17:07:00