isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：279.43 Kbytes 页数：2 Pages

ISC

无锡固电

MTP15N05

文件：89.43 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans MOSFET N-CH 60V 15A 3-Pin(3+Tab) TO-220AB

NJS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：279.93 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on)= 0.12 OHM New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETS • Av

文件：163.98 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on)= 0.085 OHM New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on)Technology • Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETS

文件：216.25 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

POWER FIELD EFFECT TRANSISTOR

文件：164.09 Kbytes 页数：5 Pages

MOTOROLA

摩托罗拉

Power MOSFET

文件：205.63 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：209.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) TO-204AA

NJS