Ceramic SMD Oscillator

文件：107.75 Kbytes 页数：2 Pages

MMD

Hold Up Module

•Designed for Extended Hold Up Applications •80 Less Hold Up Capacitance Required •Reduces System Size and Weight •10 A Output Current •Wide Input Range •User Programmable •3 Year Warranty General Efficiency •98 typical Series Resistance•0.013Ω Isolation •1000 VDC Input to Case 1000 VD

文件：524.24 Kbytes 页数：2 Pages

XPPOWER

Hold Up Module

•Designed for Extended Hold Up Applications •80 Less Hold Up Capacitance Required •Reduces System Size and Weight •10 A Output Current •Wide Input Range •User Programmable •3 Year Warranty General Efficiency •98 typical Series Resistance•0.013Ω Isolation •1000 VDC Input to Case 1000 VD

文件：524.24 Kbytes 页数：2 Pages

XPPOWER

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=13A@ TC=25℃ ·Drain Source Voltage -VDSS= 450V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：316.41 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=13A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：316.4 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：316.16 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15A@ TC=25℃ ·Drain Source Voltage -VDSS= 350V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：316.19 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode silicon Gate TMOS

TMOS POWER FETs 15 AMPERES rDS(on) = 0.3 OHM 350 and 400 VOLTS N-Channel Enhancement Mode silicon Gate TMOS

文件：500.87 Kbytes 页数：5 Pages

Motorola

摩托罗拉

N-Channel Enhancement Mode silicon Gate TMOS

TMOS POWER FETs 15 AMPERES rDS(on) = 0.3 OHM 350 and 400 VOLTS N-Channel Enhancement Mode silicon Gate TMOS

文件：500.87 Kbytes 页数：5 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：316.36 Kbytes 页数：2 Pages

ISC

无锡固电