TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

文件：308.53 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

P-Channel 60-V (D-S) MOSFET

文件：988.41 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

文件：308.53 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

P?묬hannel DPAK Power MOSFET

文件：91.91 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

P?묬hannel DPAK Power MOSFET

文件：91.91 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

P?묬hannel DPAK Power MOSFET

文件：91.91 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

P-Channel 60-V (D-S) MOSFET

文件：988.36 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P−Channel DPAK Power MOSFET

ONSEMI

安森美半导体