Pin Diode Shunt Switch Element

A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is also suited for other applications in 0.05 ~ 10 GHz ·Support up to 40 watts powe\n·High Isolation 30 dB typical to 10.0 GHz\n·Low insertion loss typical 0.4 dB to 10.0 GHz\n·Low insertion loss typical 0.2 dB to 2.7 GHz;

MACOM

PIN Diode Shunt Switch Element

文件：611.54 Kbytes 页数：4 Pages

MA-COM

PIN Diode Shunt Switch Element

文件：651.86 Kbytes 页数：5 Pages

MA-COM

N-channel 30 V 18.1 m廓 logic level MOSFET in LFPAK33 using TrenchMOS Technology

文件：768.65 Kbytes 页数：13 Pages

NEXPERIA

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