1MHz, 1.2A Output Current, Synchronous Boost Converter

This converter consumes only 100uA quiescent current when no switching. When currentload is light, this converter enters burst mode to obtain high efficiency. Whencurrent load is heavy enough, it enters fixed-frequency PWM mode. It adoptspeak current mode for fast transient response with internal co

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PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.35V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN complement: PBHV8110DA

文件：413.7 Kbytes 页数：6 Pages

PANJIT

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PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.35V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN co

文件：413.93 Kbytes 页数：6 Pages

PANJIT

強茂

PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.35V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN complement: PBHV8110DH

文件：403.75 Kbytes 页数：6 Pages

PANJIT

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