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PBHV9110DH	文件：403.75 Kbytes Page：6 Pages	PNP Low Vce(sat) Transistor Features SiliconPNPepitaxialtype LowVce(sat)-0.35V(max)@Ic/Ib=-500mA/-50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNcomplement:PBHV8110DH	PANJITPan Jit International Inc. 强茂強茂股份有限公司	PANJIT
PBHV9110DH_R1_00001	文件：403.75 Kbytes Page：6 Pages	PNP Low Vce(sat) Transistor Features SiliconPNPepitaxialtype LowVce(sat)-0.35V(max)@Ic/Ib=-500mA/-50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNcomplement:PBHV8110DH	PANJITPan Jit International Inc. 强茂強茂股份有限公司	PANJIT
PBHV9110DH-AU	文件：404.1 Kbytes Page：6 Pages	PNP Low Vce(sat) Transistor Features SiliconPNPepitaxialtype LowVce(sat)-0.35V(max)@Ic/Ib=-500mA/-50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNco	PANJITPan Jit International Inc. 强茂強茂股份有限公司	PANJIT
PBHV9110DH-AU_R1_000A1	文件：404.1 Kbytes Page：6 Pages	PNP Low Vce(sat) Transistor Features SiliconPNPepitaxialtype LowVce(sat)-0.35V(max)@Ic/Ib=-500mA/-50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNco	PANJITPan Jit International Inc. 强茂強茂股份有限公司	PANJIT
PBHV9110DH_R1_00001	文件：100 bytes Page：1 Pages	包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带封装/外壳：TO-243AA 类别：分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个描述：TRANS PNP 100V 1A SOT89	Panjit International Inc. Panjit International Inc.	Panjit International Inc.
PBHV9110DH-AU_R1_000A1	文件：100 bytes Page：1 Pages	包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带封装/外壳：TO-243AA 类别：分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个描述：TRANS PNP 100V 1A SOT89	Panjit International Inc. Panjit International Inc.	Panjit International Inc.
PBHV9110DW	文件：408.12 Kbytes Page：6 Pages	PNPLowVce(sat)Transistor Features SiliconPNPepitaxialtype LowVce(sat)-0.35V(max)@Ic/Ib=-500mA/-50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNcomplement:PBHV8110DW	PANJITPan Jit International Inc. 强茂強茂股份有限公司	PANJIT
PBHV9110DW-AU	文件：408.48 Kbytes Page：6 Pages	PNPLowVce(sat)Transistor Features SiliconPNPepitaxialtype LowVce(sat)-0.35V(max)@Ic/Ib=-500mA/-50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNco	PANJITPan Jit International Inc. 强茂強茂股份有限公司	PANJIT
PBSS9110D	文件：189.08 Kbytes Page：13 Pages	100V,1APNPlowVCEsat(BISS)transistor Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74)smallSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain(hF	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
PBSS9110D	文件：948.33 Kbytes Page：12 Pages	LowVCEsat(BISS)transistors	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
PBSS9110D	文件：302.68 Kbytes Page：14 Pages	100V,1APNPlowVCEsat(BISS)transistor Features Lowcollector-emittersaturationvoltageVCEsat HighcollectorcurrentcapabilityICandICM Highcollectorcurrentgain(hFE)athighIC Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PBSS9110T	文件：107.4 Kbytes Page：12 Pages	100V,1APNPlowVCEsat(BISS)transistor DESCRIPTION PNPlowVCEsattransistorinaSOT23plasticpackage. NPNcomplement:PBSS8110T. FEATURES •SOT23package •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Higherefficiencyleadingtolessheatgeneration APPLICATIONS •Major	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
PBSS9110T	文件：948.33 Kbytes Page：12 Pages	LowVCEsat(BISS)transistors	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
PBSS9110T	文件：187.44 Kbytes Page：12 Pages	100V,1APNPlowVCEsat(BISS)transistor DESCRIPTION PNPlowVCEsattransistorinaSOT23plasticpackage. NPNcomplement:PBSS8110T. FEATURES •SOT23package •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Higherefficiencyleadingtolessheatgeneration APPLICATIONS •Major	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
PBSS9110T	文件：1.32234 Mbytes Page：13 Pages	100V,1APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinaSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS8110T 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability •High	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PBSS9110T-Q	文件：243.23 Kbytes Page：12 Pages	100V,1APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinaSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS8110T 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability •High	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PBSS9110X	文件：208.45 Kbytes Page：15 Pages	100V,1APNPlowVCEsat(BISS)transistor Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)SMDplasticpackage. NPNcomplement:PBSS8110X. Features ■SOT89package ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Higheffici	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
PBSS9110X	文件：134.99 Kbytes Page：15 Pages	100V,1APNPlowVCEsat(BISS)transistor Generaldescription PNPlowVCEsatBreakthroughinSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)SMDplasticpackage. NPNcomplement:PBSS8110X Features ■SOT89package ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficie	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
PBSS9110X	文件：321.85 Kbytes Page：16 Pages	100V,1APNPlowVCEsat(BISS)transistor Features SOT89package Lowcollector-emittersaturationvoltageVCEsat HighcollectorcurrentcapabilityICandICM Highefficiencyleadingtolessheatgeneration	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PBSS9110Y	文件：100.79 Kbytes Page：13 Pages	100V,1APNPlowVCEsat(BISS)transistor Generaldescription PNPlowVCEsattransistorinaSOT363(SC-88)plasticpackage. Features ■SOT363package ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiencyleadingtolessheatgeneration. Applications ■Majorapplication	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	PBHV9110DH	PANJIT/强茂	20+	SOT-89	120000	原装正品可含税交易	询价
深圳市联成美业电子有限公司	PBHV9110DH	PANJIT/强茂	22+		24000	询价拨打15919799957全天在线	询价
深圳市广弘电子有限公司	PBHV9110DH	PANJIT/强茂	2021+	SOT-89	1000	13632880263	询价
中科航电（深圳）电子集团有限公司	PBHV9110DH	PANJIT/强茂		SOT-89	90000	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价
深圳市科芯源微电子有限公司	PBHV9110DH	PANJIT/强茂	23+	SOT-89	54258	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市宏捷佳电子科技有限公司	PBHV9110DH-AU_R1_000A1	Panjit International Inc.	24+	TO-243AA	9350	独立分销商,公司只做原装,诚心经营,免费试样正品保证	询价
现代芯城（深圳）科技有限公司	PBHV9110DH_R1_00001		24+	N/A	65000	一级代理-主营优势-实惠价格-不悔选择	询价
贸泽芯城（深圳）电子科技有限公司	PBHV9110DW	PANJIT/强茂	23+	SOT-223	76238	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市跃创芯科技有限公司	PBHV9110DW	PANJIT/ 强茂	2022+	SOT-223	30000	进口原装现货供应,绝对原装假一罚十	询价
深圳市创新迹电子有限公司	PBHV9110DW	PANJIT/ 强茂	2022+	SOT-223	30000	进口原装现货供应,原装假一罚十	询价

更多PBHV9110DH供应商更新时间2024-9-22 14:00:00

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