精密、低噪、CMOS、轨到轨输入输出运放

主要特点 \n低失调电压：典型 65uV，最大 300uV\n低的输入偏置电流： 1pA 最大\n单电源： 2.7V 到 5.5V\n低噪： 11nV/√Hz\n高的开环增益： 90dB\n宽带宽： 4.3MHz\n单位增益稳定;

Relmon

瑞盟科技

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

文件：97.38 Kbytes 页数：12 Pages

NEC

瑞萨

InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION

DESCRIPTION The NX7660JC is a 1 625 nm newly developed Strained Multiple Quantum Well (St-MQW) structure laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of telemetry equipment. FEATURES • Output power Pf = 5 mW MIN. @ IF = 65 mA

文件：65.71 Kbytes 页数：12 Pages

NEC

瑞萨

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

文件：61.54 Kbytes 页数：8 Pages

NEC

瑞萨