| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NX8561JC | 1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | |
NX8561JC | InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION DESCRIPTION TheNX7660JCisa1625nmnewlydevelopedStrainedMultipleQuantumWell(St-MQW)structurelaserdiodeDIPmodulewithsinglemodefiberandinternalthermoelectriccooler.Itisdesignedforlightsourcesoftelemetryequipment. FEATURES •OutputpowerPf=5mWMIN.@IF=65mA | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | |
NX8561JC | LASER DIODE 1510nmOPTICALFIBERCOMMUNICATIONS InGaAsPSTRAINEDMQWDC-PBHLASERDIODEMODULE DESCRIPTION TheNX8561JCisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber.The MultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelong | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | |
LASER DIODE 1510nmOPTICALFIBERCOMMUNICATIONS InGaAsPSTRAINEDMQWDC-PBHLASERDIODEMODULE DESCRIPTION TheNX8561JCisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber.The MultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelong | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
LASER DIODE 1510nmOPTICALFIBERCOMMUNICATIONS InGaAsPSTRAINEDMQWDC-PBHLASERDIODEMODULE DESCRIPTION TheNX8561JCisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber.The MultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelong | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
1480nmEDFAAPPLICATIONInGaAsPSTRAINEDMQWDC-PBHLASERDIODEMODULE DESCRIPTION TheNX7460LEisa1480nmpumpinglaserdiodemodulewithopticalisolatorforanEDFA(ErDopedopticalFiberAmplifier)thatcanexpandthetransmissionspanandcompensateopticallosses.IthasastrainedMultipleQuantumWell(st-MQW)DC-PBHlaserdiodethatfeatureshighoutput | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MiniatureCircularConnectors | HOSIDEN Hosiden Corporation | HOSIDEN | ||
MouldedTypeStraightPlugs | HOSIDEN Hosiden Corporation | HOSIDEN | ||
2x24WBTLor4x12Wsingle-endedcarradiopoweramplifier | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
2x24WBTLor4x12Wsingle-endedcarradiopoweramplifier | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
详细参数
- 型号：
NX8561JC
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
相关规格书
更多- STC-642-020
- STC68-3C3AK
- STC685K35
- STC9120C
- STC9960
- RGG.0B.302.CLM
- RGG.1B.303.CLM
- RGG.1B.306.CLM
- RGH1005-2B-P-111-D
- RGH1608-2C-P-101-B
- XC6124A243ER-G
- XC6124A246MG-G
- XC6124A250MG-G
- XC6124A333ER-G
- XC6124A334MR-G
- RGP10G
- RGP10G/23
- RGP10G/4
- RGP10G/73
- RGP10GE/23
- RGP10GE/4
- XC6501A151GR-G
- XC6501A181GR-G
- XC6501A251GR-G
- XC6501A281GR-G
- RGP15D
- RGP15D-E3/1
- RGP15D-E3/4
- RGP15D-E3/54
- RGP15DHE3/54
- RGP15G/1
- RGP02-14E-E3/23
- RGP02-14E-E3/4
- RGP02-14E-E3/53
- RGP02-14E-E3/73
- RGP02-14EHE3/54
- RGM0110-K
- RGM06DRMD-S273
- RGM06DRMD-S664
- RGM06DRMH-S288
- RGM06DRMN-S273
- PTX-BC1
- P-TXFKP01CAZM
- PTX-KIT1DH
- PTY00A-12-10S
相关库存
更多- STC-642-036
- STC68-3C3RK
- STC6NF30V
- STC9127
- STCA1000100
- RGG.0B.303.CLM
- RGG.1B.305.CLM
- RGG.2B.306.CLM
- RGH1005-2B-P-332-B
- RGH1608-2C-P-102-B
- XC6124A243MG-G
- XC6124A248ER-G
- XC6124A327MR-G
- XC6124A333MR-G
- XC6124A337ER-G
- RGP10G/1
- RGP10G/3
- RGP10G/54
- RGP10GE/16
- RGP10GE/3
- XC6501A1517R-G
- XC6501A1817R-G
- XC6501A2517R-G
- XC6501A2817R-G
- XC6501A28A7R-G
- RGP15D/4
- RGP15D-E3/23
- RGP15D-E3/51
- RGP15D-E3/73
- RGP15DHE3/73
- RGP02-14E-E3/1
- RGP02-14E-E3/3
- RGP02-14E-E3/51
- RGP02-14E-E3/54
- RGP02-14EHE3/53
- RGM.0B.304.NLL
- RGM06DRMD
- RGM06DRMD-S288
- RGM06DRMH
- RGM06DRMN
- PTXB2MM6.000MHZ
- PTX-BC2
- PTX-KIT1
- PTX-KIT2
- PTY00A-16-26P
