RF & MICROWAVE TRANSISTORS 800-960 MHz BASE STATION APPLICATIONS

DESCRIPTION: The MS1451 is a gold metallized silicon NPN planar transistor designed for high linearity Class AB operation in cellular base station applications. The MS1451 is designed as a medium power output device or as the driver for MS1452. Diffused emitter ballast resistors provide thermal s

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PC Board Mountable Pressure Sensor

The MS1451 is a piezoresistive silicon pressure sensor packaged in a surface mount configuration. It is intended for high volume applications where small size, light weight, low cost, and compatibility with automated assembly equipment are required. FEATURES Surface Mount Package ±0.25

文件：150.76 Kbytes 页数：5 Pages

TEC

泰科电子

RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS

DESCRIPTION: The MS1452 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station application. Features • 800-900 MHz • 24 VOLTS • COMMON EMITTER • GOLD METALLIZATION • INTERNAL INPUT

文件：141.42 Kbytes 页数：4 Pages

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RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS

DESCRIPTION: The MS1453 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS Features

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RF AND MICROWAVE TRANSISTORS 806-960 MHZ CELLULAR BASE STATIONS

DESCRIPTION: The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in cellular base station applications. Features · Gold Metallization · Diffused Emitter Ballasting · Internal Input Matching · Des

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RF & MICROWAVE TRANSISTORS 800 - 900 MHz APPLICATIONS

DESCRIPTION: The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range. Internal impedance matching assures optimum gain and efficiency across the entire frequency band. Gold metalization and emitter ballast resis

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RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1480 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 V Class C UHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR capability under specified operating conditions. Features • 470 MHz • 12.5 VOLTS • POUT = 45

文件：96.93 Kbytes 页数：3 Pages

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RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1490 is a 12.5 volt silicon NPN transistor designed primarily for UHF communications. The device utilizes an emitter ballasted die geometry capable of operating into an infinite load VSWR under specified operating conditions. Features • 512 MHz • 12.5 VOLTS • POUT = 50 W •

文件：97.5 Kbytes 页数：3 Pages

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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE 40 to 200 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier. majority carrier conduction • Low power loss,

文件：109.87 Kbytes 页数：3 Pages

PANJIT

強茂

CONNECTORS, ELECTRIC, RECTANGULAR, NONENVIRONMENTAL, MINIATURE, POLARIZED SHELL, RACK AND PANEL, GENERAL SPECIFCATION FOR

文件：517.679 Kbytes 页数：41 Pages

ITT