RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1404 is a 12.5V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. Features • 470 MHz • 12.5 VOLTS • POUT = 5.0 WATT • GP = 8.5 dB MI

文件：97.1 Kbytes 页数：3 Pages

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Inductors Military, MIL-PRF-15305 Qualified, Type LT, Molded

FEATURES • Wide inductance range in small package • Flame retardant coating • Precision performance, excellent reliability, sturdy construction • Epoxy molded construction provides superior moisture protection

文件：179.92 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS

DESCRIPTION: The MS1406 is a silicon NPN transistor designed for 12.5V AM Class C amplifiers operating in the 118–136 MHz aviation band and for 28V FM Class C amplifiers used in ground station transmitters. Diffused emitter ballast and gold metalization provide maximum ruggedness and reliability.

文件：124.94 Kbytes 页数：3 Pages

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RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS

DESCRIPTION: The MS1408 is a 28 volt epitaxial silicon NPN planar transistor designed for 108-152MHz AM class C and FM communications. This device utilizes diffused emitter resisters to achieve VSWR at rated operating conditions. Features ● FM CLASS C TRANSISTOR ● FREQUENCY 136MHz ● VOLTAGE 2

文件：103.39 Kbytes 页数：3 Pages

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RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS

DESCRIPTION: The MS1408 is a 28 volt epitaxial silicon NPN planar transistor designed for 108-152MHz AM class C and FM communications. This device utilizes diffused emitter resisters to achieve VSWR at rated operating conditions. Features • FM CLASS C TRANSISTOR • FREQUENCY 136MHz • VOLTAGE 2

文件：76.93 Kbytes 页数：3 Pages

Microsemi

美高森美

RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS

DESCRIPTION: The MS1409 is a NPN silicon transistor designed for high power gain VHF and UHF communication applications. Gold metalization and diffused emitter ballast resistors provide superior long term reliability. Features • 175 MHz • 28 VOLTS • POUT = 2.5 W • GP = 10 dB

文件：237.18 Kbytes 页数：3 Pages

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0.4 SINGLE DIGIT NUMERIC DISPLAYS

0.4 SINGLE DIGIT NUMERIC DISPLAYS

文件：63.68 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

0.4 SINGLE DIGIT NUMERIC DISPLAYS

0.4 SINGLE DIGIT NUMERIC DISPLAYS

文件：63.68 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1426 is a epitaxial silicon NPN planar transistor designed for Class C driver applications in the 450 - 512 MHz frequency range. This device uses an emitter ballasted die geometry specifically designed for optimum stable power gain, maximum efficiency and infinite VSWR capabi

文件：98.13 Kbytes 页数：3 Pages

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0.39 SINGLE DIGIT NUMERIC DISPLAYS

0.39 SINGLE DIGIT NUMERIC DISPLAYS

文件：61.45 Kbytes 页数：2 Pages

MICRO-ELECTRONICS