RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1077 is a Class AB epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. KEY FEATURES ◾ Optimized for SSB ◾ 30 MHz ◾ 28 Volts ◾ IMD –30dB ◾

文件：101.51 Kbytes 页数：4 Pages

MICROSEMI

美高森美

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1078 is a Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. KEY FEATURES ◾ Optimized for SSB ◾ 30 MHz ◾ 28 Volts ◾ IMD –30d

文件：102.26 Kbytes 页数：4 Pages

MICROSEMI

美高森美

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1079 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features • 30 MHz • 50 VOLTS • POUT = 220 W • GP = 13 dB MINIMUM • COMMON EMITTER CONFIGURATI

文件：263.74 Kbytes 页数：4 Pages

ADPOW

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier • Schottky Barrier Rectifier • Guard Ring Protection • 175 °C Junction Temperature • VRRM 80 to 100 Volts

文件：87.69 Kbytes 页数：2 Pages

MICROSEMI

美高森美

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier • Schottky Barrier Rectifier • Guard Ring Protection • 175 °C Junction Temperature • VRRM 80 to 100 Volts

文件：87.69 Kbytes 页数：2 Pages

MICROSEMI

美高森美

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

文件：97.3 Kbytes 页数：3 Pages

ADPOW

Control IC

文件：1.2316 Mbytes 页数：41 Pages

SHINDENGEN

10 AMP SCHOTTKY BARRIER RECTIFIER

文件：120.58 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Schottky Barrier Rectifiers

文件：97.11 Kbytes 页数：2 Pages

EIC

1.0A SCHOTTKY BARRIER DIODE

文件：135.2 Kbytes 页数：2 Pages

ZSELEC

淄博圣诺