SURFACE MOUNT SCHOTTKY BARRIER BRIDGE RECTIFIER

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Metal to silicon rectifier. majority carrier conduction • Guard ring for overvoltage protection • Low power loss,high efficiency • For surface mounted applications • High current capacity ,Low forward

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KISEMICONDUCTOR

Power Film Resistors

[CADDOCK ELECTRONICS, INC.] Power Film Resistor Family with Wide Resistance Range and +275°C Maximum Temperature With power ratings to 22 Watts and voltage ratings as high as 6,000 volts in an axial-lead resistor with values to 30 Megohms, the Type MS Power Film Resistors deliver the performanc

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ETCList of Unclassifed Manufacturers

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RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS

DESCRIPTION: The MS1501 is a silicon NPN bipolar device specifically designed for high linearity applications in the UHF frequency range including TV Bands IV and V. Features • 860 MHz • POUT = 2 WATTS • GP = 8.5 dB MINIMUM • GOLD METALLIZATION • CLASS A LINEAR OPERATION • COMMON EMITTER C

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RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS

DESCRIPTION: The MS1502 is a silicon NPN bipolar transistor designed for UHF linear applications, specifically TV Bands IV and V. The MS1502 is characterized for high linearity, Class A operation. Device ruggedness and reliability are maximized with emitter ballasting and gold metallization.

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RF & MICROWAVE TRANSISTORS WIDE BAND VHF/UHF APPLICATIONS

DESCRIPTION: The MS1503 is a 28V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. The device utilizes diffused emitter resistors to achieve infinite VSWR capability under operating conditions. Internal inpedance matching produces optimum power gain and ef

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RF AND MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

DESCRIPTION: The MS1504 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The MS1504 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. Features · 160 MHz · 13.6 Volts · Common Emitter ·

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RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1504 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The MS1504 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. KEY FEATURES 160 MHz 13.6 Volts Common Emitter PO

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MICROSEMI

美高森美

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

DESCRIPTION: The MS1505 is a 13.6 volt Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The MS1505 utilizes an emitter ballasted die geometry to withstand severe load VSWR conditions. Features • 160 MHz • 13.6 VOLTS • POUT = 30 WATTS • GP = 10 dB MIN

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RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

DESCRIPTION: The MS1506 is a 13.6 volt Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The MS1506 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. Features • 160 MHz • 13.6 VOLTS • POUT = 40 WATTS • GP = 9.0 d

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RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

DESCRIPTION: The MS1508 is a 28 V Class C gold metallized epitaxial silicon NPN planar transistor designed for UHF military and commercial equipment. The MS1508 is an internally matched, broadband device optimized for operation within the 225 – 400 MHz frequency range. This device utlizies diffus

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