RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1404 is a 12.5V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. Features • 470 MHz • 12.5 VOLTS • POUT = 5.0 WATT • GP = 8.5 dB MI

文件：97.1 Kbytes 页数：3 Pages

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Inductors Military, MIL-PRF-15305 Qualified, Type LT, Molded

FEATURES • Wide inductance range in small package • Flame retardant coating • Precision performance, excellent reliability, sturdy construction • Epoxy molded construction provides superior moisture protection

文件：179.92 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS

DESCRIPTION: The MS1406 is a silicon NPN transistor designed for 12.5V AM Class C amplifiers operating in the 118–136 MHz aviation band and for 28V FM Class C amplifiers used in ground station transmitters. Diffused emitter ballast and gold metalization provide maximum ruggedness and reliability.

文件：124.94 Kbytes 页数：3 Pages

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RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS

DESCRIPTION: The MS1408 is a 28 volt epitaxial silicon NPN planar transistor designed for 108-152MHz AM class C and FM communications. This device utilizes diffused emitter resisters to achieve VSWR at rated operating conditions. Features ● FM CLASS C TRANSISTOR ● FREQUENCY 136MHz ● VOLTAGE 2

文件：103.39 Kbytes 页数：3 Pages

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RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS

DESCRIPTION: The MS1408 is a 28 volt epitaxial silicon NPN planar transistor designed for 108-152MHz AM class C and FM communications. This device utilizes diffused emitter resisters to achieve VSWR at rated operating conditions. Features • FM CLASS C TRANSISTOR • FREQUENCY 136MHz • VOLTAGE 2

文件：76.93 Kbytes 页数：3 Pages

MICROSEMI

美高森美

RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS

DESCRIPTION: The MS1409 is a NPN silicon transistor designed for high power gain VHF and UHF communication applications. Gold metalization and diffused emitter ballast resistors provide superior long term reliability. Features • 175 MHz • 28 VOLTS • POUT = 2.5 W • GP = 10 dB

文件：237.18 Kbytes 页数：3 Pages

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0.4 SINGLE DIGIT NUMERIC DISPLAYS

0.4 SINGLE DIGIT NUMERIC DISPLAYS

文件：63.68 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

0.4 SINGLE DIGIT NUMERIC DISPLAYS

0.4 SINGLE DIGIT NUMERIC DISPLAYS

文件：63.68 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1426 is a epitaxial silicon NPN planar transistor designed for Class C driver applications in the 450 - 512 MHz frequency range. This device uses an emitter ballasted die geometry specifically designed for optimum stable power gain, maximum efficiency and infinite VSWR capabi

文件：98.13 Kbytes 页数：3 Pages

ADPOW

0.39 SINGLE DIGIT NUMERIC DISPLAYS

0.39 SINGLE DIGIT NUMERIC DISPLAYS

文件：61.45 Kbytes 页数：2 Pages

MICRO-ELECTRONICS