Gallium Arsenide PHEMT RF Power Field Effect Transistor

3.5 GHz, 3 W, 12 V POWER FET GaAs PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. • Typical Single-Carrier W-CDMA Performance: VDD = 12 Volts, I

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FREESCALEFreescale Semiconductor, Inc

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3.5 GHz, 3 W, 12 V Power FET GaAs pHEMT

\nMRFG35003ANT1 in Lifetime Buy. Last Order Date: 24 May 2014. Last Ship Date: 24 May 2015. View replacement parts via Part Number Search. \nTypical Single–Carrier W–CDMA Performance: VDD = 12 \nVolts, IDQ = 55 mA, Pout = 300 mWatts Avg., 3550 MHz, Channel \nBandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.\nPower Gain: 10.8 dB\n\tDrain Efficiency: 24.5%\n\tACPR @ 5 MHz Offset:  –43 dBc in 3.84 MHz Channel Bandwid;

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