RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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FREESCALEFreescale Semiconductor, Inc

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945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

Overview The MRF9045LR1 and MRF9045LSR1 are designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 28 volt base station equipment \n•Typical Two–Tone Performance at 945 MHz, 28 Volts\nOutput Power: 45 Watts PEP\n\tPower Gain: 18.8 dB\n\tEfficiency: 42%\n\tIMD:  –32 dBc\n\n•Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power\n\n•Integrated ESD Protection\n\n•Designed for Maximum Gain and Insertion Pha;

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945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

OverviewReplaced by MRF9045NR1(NBR1). There are no form, fit or function changes with this part replacement. The MRF9045MR1 and MRF9045MBR1 are designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make \n•Typical Performance at 945 MHz, 28 Volts\nOutput Power: 45 Watts PEP\n\tPower Gain: 19 dB\n\tEfficiency: 41% (Two Tones)\n\tIMD: –31 dBc\n\n•Integrated ESD Protection\n\n•Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, \n45 Watts CW Output Power\n\n•Excellent Thermal Stability\n\n;

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945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

MRF9045NR1 Not Recommended for New Design. Possible Replacement Part: MRFE6S9045NR1, MRFE6S9060NR1. • Typical Performance at 945 MHz, 28 VoltsOutput Power: 45 Watts PEPPower Gain: 19 dBEfficiency: 41% (Two Tones)IMD: –31 dBc\n• Integrated ESD Protection\n• Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power\n• Excellent Thermal Stability\n• Characterized with S;

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