MRF8S7235N中文资料飞思卡尔数据手册PDF规格书

728--768 MHz, 63 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET

Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01 Probability on CCDF.

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 360 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness

• Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW

特性 Features

• 100 PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C Operation

• Designed for Digital Predistortion Error Correction Systems

• Optimized for Doherty Applications

• 225°C Capable Plastic Package

• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.